UPG110P(1989) Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza

componentes Descripción

Fabricante

UPG110P
(Rev.:1989)

2 to 8 GHz WIDE BAND AMPLIFIER CHIP

NEC => Renesas Technology 

µPG110P

ELECTRICAL CHARACTERISTICS (TA = 25 °C)*3

CHARACTERISTIC

Supply Current

Power Gain

Gain Flatness

Input Return Loss

Output Return Loss

Isolation

Output Power at 1 dB

Gain Compression Point

SYMBOL

IDD

GP

∆GP

RLin

RLout

ISL

PO(1 dB)

MIN.

65

12

6

7

30

10

TYP.

135

15

10

10

40

14

MAX.

180

±1.5

UNIT

mA

dB

dB

dB

dB

dB

dBm

TEST CONDITIONS

VDD = +8 V

f = 2 to 8 GHz

*3 These characteristics are based on performance of devices mounted in the standard package shown in Fig. 1.

Fig. 1 4 pin Ceramic Package

Top View

4.5 MAX.

0.6

± 0.06

4.1 MIN.

2

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