UPG110P(1989) Ver la hoja de datos (PDF) - NEC => Renesas Technology
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UPG110P Datasheet PDF : 8 Pages
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DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG110P
2 to 8 GHz WIDE BAND AMPLIFIER CHIP
DESCRIPTION
The µPG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And
the device is available in chip form. The µPG110P is suitable for the gain stage required high gain characteristic of
the microwave communication system and the measurement equipment.
FEATURES
• Ultra wide band : 2 to 8 GHz
• High Power Gain : GP = 15 dB TYP.
@f = 2 to 8 GHz
• Medium Power : PO(1 dB) = +14 dBm TYP. @f = 2 to 8 GHz
ORDERING INFORMATION
PART NUMBER
µPG110P
FORM
Chip
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Supply Voltage
Input Voltage
Input Power
Total Power Dissipation
Operating Temperature
Storage Temperature
VDD
VIN
Pin
Ptot*1
Topr*2
Tstg
+10
–5 to +0.6
+10
1.5
–65 to +125
–65 to +125
V
V
dBm
W
°C
°C
*1 Mounted with AuSn hard solder
*2 The temperature of base material beside the chip
RECOMMENDED OPERATING CONDITIONS (TA = 25 °C)
Supply Voltage
VDD
Input Power
Pin
+8 ± 0.2
–5
V
dBm
Document No. P11882EJ2V0DS00 (2nd edition)
(Previous No. ID-2454)
Date Published September 1996 P
Printed in Japan
©
1989
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