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TP5335 Ver la hoja de datos (PDF) - Supertex Inc

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componentes Descripción
Fabricante
TP5335 Datasheet PDF : 3 Pages
1 2 3
Thermal Characteristics
Package
ID
(continuous)1
ID
(pulsed)
TO-236AB
-85mA
-400mA
Notes:
1. I (continuous) is limited by max rated T .
D
j
Power Dissipation
@TA = 25OC
0.36W
Θjc
(OC/W)
200
TP5335
Θja
(OC/W)
350
IDR1
-85mA
IDRM
-400mA
Electrical Characteristics (@25OC unless otherwise specified)
Symbol Parameter
Min
Typ
Max
Units Conditions
BV
Drain-to-source breakdown voltage
-350
-
-
DSS
V V = 0V, I = -100µA
GS
D
VGS(TH) Gate threshold voltage
-1.0
-
-2.4
V
VDS = VGS, ID = -1.0mA
ΔVGS(TH) Change in VGS(TH) with temperature
-
-
4.5
mV/OC VDS = VGS, ID = -1.0mA
IGSS Gate body leakage current
-
-
-100
nA VGS = ±20V, VDS = 0V
-
-
-10
µA VDS = Max rating, VGS = 0V
IDSS Zero gate voltage drain current
-
-
-1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
-
-
-5.0
nA VGS = 0V, VDS = -330V
ID(ON) ON-State drain current
-200
-
-
mA
VGS = -4.5V, VDS = -25V
-400
-
-
VGS = -10V, VDS = -25V
RDS(ON)
Static drain-to-source ON-state
resistance
-
-
75
Ω
VGS = -4.5V, ID = -150mA
-
-
30
VGS = -10V, ID = -200mA
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
1.7
%/OC VGS = -10V, ID = -200mA
GFS Forward transconductance
125
-
-
mmho VDS = -25V, ID = -200mA
CISS Input capacitance
-
COSS Common source output capacitance
-
CRSS Reverse transfer capacitance
-
-
110
V = 0V,
GS
-
60
pF VDS = -25V,
-
22
f = 1MHz
td(ON)
tr
td(OFF)
tf
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
-
-
20
-
-
15
VDD = -25V,
ns I = -150mA,
-
-
25
D
RGEN = 25Ω,
-
-
25
V
Diode forward voltage drop
SD
-
-
-1.8
V V = 0V, I = -200mA
GS
SD
trr
Notes:
Reverse recovery time
-
800
-
ns
VGS = 0V, ISD = -200mA
1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
10%
-10V
t(ON)
90%
t(OFF)
td(ON)
tr
td(OFF)
tF
0V
OUTPUT
VDD
10%
90%
90%
10%
PULSE
GENERATOR
RGEN
INPUT
D.U.T.
OUTPUT
RL
VDD
2

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