IRF730B Ver la hoja de datos (PDF) - Kersemi Electronic Co., Ltd.
Número de pieza
componentes Descripción
Fabricante
IRF730B Datasheet PDF : 9 Pages
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Typical Characteristics
VGS
Top : 15.0 V
101
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
5
4
VGS = 10V
3
VGS = 20V
2
1
※ Note : TJ = 25℃
0
0
3
6
9
12
15
18
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2000
1500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
1000
Coss
500
※ Notes :
C
rss
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
101
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1.
2.
V25DS0μ=
40V
s Pulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 80V
10
DS
VDS = 200V
8
V = 320V
DS
6
4
2
※ Note : ID = 5.5 A
0
0
3
6
9
12
15
18
21
24
27
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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