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TN5325 Ver la hoja de datos (PDF) - Supertex Inc

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componentes Descripción
Fabricante
TN5325 Datasheet PDF : 6 Pages
1 2 3 4 5 6
TN5325
Thermal Characteristics
Package
ID
(continuous)
(mA)
ID
(pulsed)
(A)
Power Dissipation
@TA = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR
(mA)
IDRM
(A)
TO-236AB (SOT-23)
150
0.4
0.36
200
350
150
0.4
TO-92
215
0.8
0.74
125
170
215
0.8
TO-243AA (SOT-89)
316
1.5
1.6
15
78
316
1.5
Notes:
† ID (continuous) is limited by max rated Tj .
‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter
Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage
250 -
-
V VGS = 0V, ID = 100µA
VGS(th) Gate threshold voltage
0.6 -
2.0
V VGS = VDS, ID = 1.0mA
ΔVGS(th) Change in VGS(th) with temperature
-
-
-4.5 mV/OC VGS = VDS, ID = 1.0mA
IGSS Gate body leakage
-
-
100
nA VGS = ± 20V, VDS = 0V
IDSS Zero gate voltage drain current
-
-
1.0
µA VGS = 0V, VDS = 100V
-
-
10
VGS = 0V, VDS = Max Rating
-
-
1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
ID(ON) On-state drain current
0.6 -
-
A
VGS = 4.5V, VDS = 25V
1.2 -
-
VGS = 10V, VDS = 25V
RDS(ON)
Static drain-to-source
on-state resistance
-
-
8.0
Ω
VGS = 4.5V, ID = 150mA
-
-
7.0
VGS = 10V, ID = 1.0A
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
1.0 %/OC VGS = 4.5V, ID = 150mA
GFS Forward transductance
150 -
- mmho VDS = 25V, ID = 200mA
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
-
- 110
VGS = 0V,
-
-
60
pF VDS = 25V,
-
-
23
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
-
-
20
-
-
15
VDD = 25V,
-
-
25
ns ID = 150mA,
RGEN = 25Ω
-
-
25
VSD Diode forward voltage drop
-
-
1.8
V VGS = 0V, ISD = 200mA
trr
Reverse recovery time
- 300 -
ns VGS = 0V, ISD = 200mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
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