TK80S04K3L(2012) Ver la hoja de datos (PDF) - Toshiba
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Fabricante
TK80S04K3L Datasheet PDF : 9 Pages
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6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
Drain cut-off current
IDSS
VDS = 40 V, VGS = 0 V
Drain-source breakdown voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
40
V(BR)DSX ID = 10 mA, VGS = -20 V
20
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
Drain-source on-resistance
RDS(ON) VGS = 6 V, ID = 40 A
VGS = 10 V, ID = 40 A
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Test Condition
Min
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Crss
Coss
tr
See Figure 6.2.1.
ton
tf
toff
TK80S04K3L
Typ. Max Unit
±10
µA
10
V
3.0
3.0
4.8
mΩ
2.4
3.1
Typ. Max Unit
4340
pF
570
910
13
ns
28
20
80
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Qg
VDD ≈ 32 V, VGS = 10 V, ID = 80 A
Qgs
Qgd
Min Typ. Max Unit
87
nC
57
30
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
(Note 4)
(Note 4)
IDR
IDRP
VDSF
IDR = 80 A, VGS = 0 V
Reverse recovery time
Reverse recovery charge
trr
IDR = 80 A, VGS = 0 V
Qrr
-dIDR/dt = 50 A/µs
Note 4: Ensure that the channel temperature does not exceed 175.
Min Typ. Max Unit
80
A
160
-1.2
V
57
ns
45
nC
3
2012-02-02
Rev.2.0
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