TK80S04K3L(2012) Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

Fabricante

TK80S04K3L
(Rev.:2012)

MOSFETs Silicon N-channel MOS (U-MOSIV)

Toshiba 

5. Thermal Characteristics

TK80S04K3L

Characteristics

Symbol

Max

Unit

Channel-to-case thermal resistance

Rth(ch-c)

1.5

/W

Note 1: Ensure that the channel temperature does not exceed 175.

Note 2: VDD = 25 V, Tch = 25 (initial), L = 22 µH, RG = 1 Ω, IAR = 80 A

Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2

2012-02-02

Rev.2.0

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