HAL730SF-K Ver la hoja de datos (PDF) - Micronas
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HAL730SF-K Datasheet PDF : 19 Pages
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DATA SHEET
HAL 710, HAL 730
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24V, GND = 0 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
Symbol
IDD
IDD
VDDZ
VOZ
VOL
VOL
IOH
Parameter
Supply Current
Supply Current
over Temperature Range
Overvoltage Protection
at Supply
Overvoltage Protection
at Output
Output Voltage
Output Voltage over
Temperature Range
Output Leakage Current
Pin No.
1
1
1
2,3
2,3
2,3
2,3
IOH
fosc
ten(O)
tr
Output Leakage Current over
2,3
Temperature Range
Internal Sampling Frequency
−
over Temperature Range
Enable Time of Output after
1
Setting of VDD
Output Rise Time
2,3
tf
Output FallTime
2,3
RthSB
case
Thermal Resistance Junction to −
Substrate Backside
SOT89B-2
Min.
3
2
−
−
−
−
−
−
100
−
−
−
−
Typ.
5.5
7
28.5
28
130
130
0.06
−
150
50
0.2
0.2
150
Max.
9
10
Unit
mA
mA
32
V
32
V
280
mV
400
mV
0.1
μA
10
μA
−
kHz
−
μs
−
μs
−
μs
200
K/W
Test Conditions
TJ = 25 °C
IDD = 25 mA, TJ = 25 °C, t = 2 ms
IOL = 20 mA, TJ = 25 °C, t = 15 ms
IOL = 10 mA, TJ = 25 °C
IOL = 10 mA,
Output switched off, TJ = 25 °C,
VOH = 3.8 V to 24 V
Output switched off, TJ ≤ 140 °C,
VOH = 3.8 V to 24 V
VDD = 12 V,
B>Bon + 2 mT or B<Boff − 2 mT
VDD = 12 V, RL = 2.4 kΩ, CL =
20 pF
VDD = 12 V, RL = 2.4 kΩ, CL =
20 pF
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
pad size
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–2: Recommended pad size SOT89B-2
Dimensions in mm
Micronas
Oct. 13, 2009; DSH000031_002EN
11
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