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TC911B

AUTO-ZEROED OPERATIONAL AMPLIFIERS

TelCom Semiconductor Inc => Microchip 

AUTO-ZEROED MONOLITHIC

OPERATIONAL AMPLIFIERS

TC911A

TC911B

ABSOLUTE MAXIMUM RATINGS*

Total Supply Voltage (VDD to VSS) ........................... +18V

Input Voltage ........................ (VDD + 0.3V) to (VSS – 0.3V)

Current into Any Pin .................................................10mA

While Operating ................................................100µA

Storage Temperature Range ................ – 65°C to +150°C

Lead Temperature (Soldering, 10 sec) ................. +300°C

Operating Temperature Range

C Device ................................................ 0°C to +70°C

Package Power Dissipation (TA = ≤ 70°C)

Plastic DIP ...................................................... 730mW

Plastic SOIC ................................................... 470mW

*Static-sensitive device. Unused devices should be stored in conductive

material. Stresses above those listed under “Absolute Maximum Ratings”

may cause permanent damage to the device. These are stress ratings only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of the specifications is not

implied.

ELECTRICAL CHARACTERISTICS: VS = ±5V, TA = +25°C, unless otherwise indicated.

Symbol Parameter

VOS

TCVOS

IB

Input Offset Voltage

Average Temperature

Coefficient of Input

Offset Voltage

Average Input Bias

Current

IOS

Average Input

Offset Current

eN

Input Voltage Noise

CMRR

CMVR

AOL

VOUT

BW

SR

PSRR

VS

IS

Common-Mode

Rejection Ratio

Common-Mode

Voltage Range

Open-Loop Voltage

Gain

Output Voltage Swing

Closed Loop

Bandwidth

Slew Rate

Power Supply

Rejection Ratio

Operating Supply

Voltage Range

Quiescent Supply

Current

Test Conditions

TA = +25°C

0°C ≤ TA ≤ +70°C

–25°C ≤ TA ≤ +85°C

(Note 1)

TA = +25°C

0°C ≤ TA ≤ +70°C

–25°C ≤ TA ≤ +85°C

TA = +25°C

TA = +85°C

0.1 to 1 Hz, RS ≤ 100Ω

0.1 to 10 Hz, RS ≤ 100Ω

VSS ≤ VCM ≤ VDD – 2.2

TC911A

Min Typ Max

—

5

15

—

0.05 0.15

—

0.05 0.15

—

—

70

—

—

3

—

—

4

—

5

20

—

—

1

—

0.65

—

—

11

—

110

116

—

TC911B

Min Typ Max

—

15

30

—

0.1

0.25

—

0.1

0.25

—

—

120

—

—

4

—

—

6

—

10

40

—

—

1

—

0.65

—

—

11

—

105

110

—

VSS

— VDD – 2

VSS

RL = 10 kΩ, VOUT = ±4V 115

120

—

110

— VDD – 2

120

—

RL = 10 kΩ

VSS + 0.3 — VDD – 0.9 VSS + 0.3

Closed Loop Gain = +1 —

1.5

—

—

— VDD – 0.9

1.5

—

RL = 10 kΩ, CL = 50 pF

—

2.5

—

±3.3V to ±5.5V

112

—

—

—

2.5

—

105

—

—

Split Supply

Single Supply

VS = ±5V

±3.3

—

±8

6.5

—

16

—

350

600

±3.3

—

±8

6.5

—

16

—

—

800

NOTES: 1. Characterized; not 100% tested.

Unit

µV

µV/°C

µV/°C

pA

nA

nA

pA

nA

µVP-P

µVP-P

dB

V

dB

V

MHz

V/µs

dB

V

V

µA

3-264

TELCOM SEMICONDUCTOR, INC.

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