GP250MHB06S Ver la hoja de datos (PDF) - Dynex Semiconductor
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GP250MHB06S Datasheet PDF : 10 Pages
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GP250MHB06S
INDUCTIVE SWITCHING CHARACTERISTICS
Tj = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
tf
Fall time
EOFF
Turn-off energy loss
td(on)
Turn-on delay time
tr
Rise time
EON
Turn-on energy loss
trr
Diode reverse recovery time
Qrr
Diode reverse recovery charge
Tj = 125˚C unless stated otherwise.
td(off)
Turn-off delay time
t
Fall time
f
EOFF
Turn-off energy loss
td(on)
Turn-on delay time
tr
Rise time
E
Turn-on energy loss
ON
trr
Diode reverse recovery time
Qrr
Diode reverse recovery charge
Conditions
Min. Typ. Max. Units
-
810
-
ns
IC = 250A
VGE = ±15V
VCE = 50% VCES
R
G(ON)
=
R
G(OFF)
=
5Ω
L ~ 100nH
-
310
-
ns
-
20
-
mJ
-
330
-
ns
-
130
-
ns
-
12
-
mJ
IF = 250A
-
165
-
ns
VR = 50%VCES, dIF/dt = 1500A/µs
-
15
-
µC
- 1050 -
ns
IC = 250A
VGE = ±15V
VCE = 50% VCES
R
G(ON)
=
R
G(OFF)
=
5Ω
L ~ 200nH
-
450
-
ns
-
30
-
mJ
-
380
-
ns
-
160
-
ns
-
18
-
mJ
IF = 250A
-
230
-
ns
VR = 50%VCES, dIF/dt = 1500A/µs
-
23
-
µC
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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