T35L6464A Ver la hoja de datos (PDF) - Taiwan Memory Technology

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T35L6464A

SYNCHRONOUS BURST SRAM 64K x 64 SRAM

Taiwan Memory Technology 

tm TE

CH

T35L6464A

DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED

OPERATING CONDITIONS

(0°C ≤ TA ≤ 70°C; Vcc = + 3.3V +10%/-5% unless otherwise noted)

MA X

DESCRIPTION

CONDITIONS

SYM. TYP -5 -6 -7 -8 UNITS NOTES

Power Supply

Current:

Device selected; all inputs

≤VIL or ≥ VIH; cycle time

Icc 200 300 260 240 210 mA 3, 12, 13

Operating

≥tKC MIN; VCC = MAX;

Power Supply

outputs open

Device selected; ADSC ,

ISB1 30 60 55 50 45 mA 12, 13

Current: Idle

ADSP , ADV , GW , BWE

≥ VIH; all other inputs ≤ VIL

or ≥VIH; VCC = MAX; cycle

time ≥tKC MIN: outputs open

CMOS Standby Device deselected; VCC =

ISB2 2 10 10 10 10 mA 12, 13

MAX; all inputs ≤ VSS + 0.2

or ≥ VCC - 0.2; all inputs

static; CLK frequency = 0

TTL Standby

Device deselected; all inputs ISB3 15 40 40 40 40 mA 12, 13

≤ VIL or ≥ VIH; all inputs

static; VCC = MAX;

CLK frequency = 0

Clock Running Device deselected; all inputs ≤ ISB4 30 81 76 66 51 mA 12, 13

VIL or ≥ VIH; VCC = MAX;

CLK cycle time ≥ tKCMIN

CAPACITANCE

DESCRIPTION

Input Capacitance

Input/ Output

Capacitance(DQ)

CONDITIONS SYM. TYP MAX

TA = 25°C; f = 1 MHz CI

3

4

VCC = 3.3V

CO

6

7

UNITS

pF

pF

NOTES

4

4

THERMAL CONSIDERATION

DESCRIPTION

Thermal Resistance - Junction to

Ambient

Thermal Resistance - Junction to

Case

CONDITIONS

Still air, soldered on

4.25x

1.125 inch 4-layer PCB

SYM. QFP TYP UNITS

ΘJA

20

°C/W

ΘJB

1

°C/W

NOTES

Taiwan Memory Technology, Inc. reserves the right P. 8

to change products or specifications without notice.

Publication Date: AUG. 1998

Revision: E

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