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T35L6464A Ver la hoja de datos (PDF) - Taiwan Memory Technology

Número de pieza
componentes Descripción
Fabricante
T35L6464A
TMT
Taiwan Memory Technology TMT
T35L6464A Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
tm TE
CH
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss..
………... -0.5V to +4.6V
I/O Supply Voltage VccQ .........……..-0.5V to Vcc
VIN (inputs)............................ -0.5V to Vcc +0.5V
Storage Temperature (plastic)...... -55°C to +150°C
Junction Temperature ...........…................ +150°C
Power Dissipation .........................................1.6W
Short Circuit Output Current...................... 100mA
T35L6464A
*Stresses greater than those listed under "Absolute
Maximum Ratings" may cause permanent damage
to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions above those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
reliability.
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS
(0°C TA 70°C; Vcc = + 3.3V +10%/-5%; unless otherwise noted)
DESCRIPTION
CONDITIONS SYM. MIN MAX UNITS
Input High (Logic) voltage
VIH 2 VccQ + 0.3
V
Input Low (Logic) voltage
VIL -0.3
0.8
V
Input Leakage Current
0V VIN VCC
ILI
-2
2
µA
Output Leakage Current Output(s) disabled, 0V ILO -2
2
µA
VOUTVCC
Output High Voltage
IOH = -4.0 mA
VOH 2.4
V
Output Low Voltage
IOL = 8.0 mA
VOL
0.4
V
Supply Voltage
Vcc 3.1
3.6
V
N O TES
1, 2
1, 2
14
1,11
1,11
1
Taiwan Memory Technology, Inc. reserves the right P. 7
to change products or specifications without notice.
Publication Date: AUG. 1998
Revision: E

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