T35L6432A Ver la hoja de datos (PDF) - Taiwan Memory Technology

Número de pieza

componentes Descripción

Fabricante

T35L6432A

64K x 32 SRAM

Taiwan Memory Technology 

tm TE

CH

T35L6432A

PIN DESCRIPTIONS (continued)

QFP PINS

SYM. TYPE

DESCRIPTION

31

MODE Input- Mode: This input selects the burst sequence. A LOW on this pin

Static selects LINEAR BURST. A NC or HIGH on this pin selects

INTERLEAVED BURST. Do not alter input state while device is

operating.

64

ZZ Input Snooze Enable: This active HIGH asynchronous input causes the

device to enter a low-power standby mode in which all data in the

memory arry is retained.

2,3,6-9,12,13, 18,

19,22-25,28,29,52,

53,56-59,62,63,68,

69,72-75,78,79,

DQ1-

DQ32

Input/

Output

Data Inputs/Outputs: First Byte is DQ1-DQ8. Second Byte is

DQ9-DQ16. Third Byte is DQ17-DQ24. Fourth Byte is DQ25-

DQ32. Input data must meet setup and hold times around the

rising edge of CLK.

15,41,65,91

VCC Supply Power Supply: 3.3V +10%/-5%

17,40,67,90

VSS Ground Ground: GND

4,11,20,27,54,

61,70,77

VCCQ I/O Supply Output Buffer Supply: 3.3V +10%/-5%

5,10,21,26,55,

60,71,76

VSSQ I/O Ground Output Buffer Ground: GND

1,14,16,30,38,39, NC

42,43,50,51,66,80

- No Connect: These signals are not internally conntected.

Taiwan Memory Technology, Inc. reserves the right P. 4

to change products or specifications without notice.

Publication Date: DEC. 1998

Revision:A

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