T2316160A Ver la hoja de datos (PDF) - Taiwan Memory Technology
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T2316160A Datasheet PDF : 13 Pages
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tm TE
CH
CAPACITANCE
(Ta =25°C, Vcc =5V, f = 1M HZ)
Parameter
Input Capacitance (address)
Symbol
Typ
CI1
-
Input Capacitance ( RAS , CAS , WE , OE )
CI2
-
Output Capacitance (data-in/out)
CI/O
-
T2316160A
Max
Unit
5
pF
7
pF
10
pF
AC CHARACTERISTICS (note 1,2,3) (Ta = 0 to 70°C)
TEST CONDITIONS:
Vcc=5V ±10%, VIH/VIL=2.4/0.8V,VOH/VOL=2.0/0.8V
Input rise and fall times: 2ns
Output Load: 2TTL gate + CL (100pF)
AC CHARACTERISTICS
-45
PARAMETER
SYM MIN MAX
Read or Write Cycle Time
Read Write Cycle Time
Fast-Page-Mode Read or Write Cycle Time
Fast-Page-Mode Read-Write Cycle Time
Access Time From RAS
tRC
85
tRWC 105
tPC
26
tPCM 70
tRAC
45
Access Time From CAS
tCAC
11
Access Time From OE
tOAC
11
Access Time From Column Address
Access Time From CAS Precharge
tAA
19
tACP
22
RAS Pulse Width
tRAS 45 10K
RAS Pulse Width (Fast Page Mode)
tRASC 45 100K
RAS Hold Time
tRSH 11
RAS Precharge Time
tRP
28
CAS Pulse Width
tCAS 10 10K
CAS Hold Time
tCSH 40
CAS Precharge Time
tCP
6
RAS to CAS Delay Time
tRCD 10 34
CAS to RAS Precharge Time
tCRP
5
Row Address Setup Time
Row Address Hold Time
RAS to Column Address Delay Time
tASR
0
tRAH 5
tRAD 8 26
Column Address Setup Time
tASC
0
-60
MIN MAX UNIT Notes
110
ns
140
ns
35
ns
85
ns
60 ns 4
15 ns 5
15 ns 13
30 ns 8
35 ns
60 10K ns
60 100K ns
15
ns
40
ns
15 10K ns
60
ns
10
ns
20 45 ns 7
5
ns
0
ns
10
ns
12 30 ns 8
0
Taiwan Memory Technology, Inc. reserves the right P. 4
to change products or specifications without notice.
Publication Date: APR. 2002
Revision:A
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