T2316160A Ver la hoja de datos (PDF) - Taiwan Memory Technology

Número de pieza

componentes Descripción

Fabricante

T2316160A

1024K x 16 DYNAMIC RAM FAST PAGE MODE

Taiwan Memory Technology 

tm TE

CH

T2316160A

ABSOLUTE MAXIMUM RATINGS*

Voltage on Any pin Relative to VSS…... -1V to +7V

Operating Temperature, Ta (ambient).. 0°C to +70°C

Storage Temperature (plastic)...….. -55°C to +150°C

Power Dissipation .......................…….............. 1.2W

Short Circuit Output Current.............…........... 50mA

*Stresses greater than those listed under "Absolute

Maximum Ratings" may cause permanent damage

to the device. This is a stress rating only and

functional operation of the device at these or any

other conditions above those indicated in the

operational sections of this specification is not

implied. Exposure to absolute maximum rating

conditions for extended periods may affect

reliability.

DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED

OPERATING CONDITIONS

(0°C ≤ Ta ≤ 70°C; VCC = 5V ± 10 % unless otherwise noted)

DESCRIPTION

CONDITIONS

Supply Voltage

Supply Voltage

Input High (Logic) voltage

Input Low (Logic) voltage

Input Leakage Current

Output Leakage Current

0V ≤ VIN ≤ 7V

0V ≤ VOUT≤ 7V

Output(s) disabled

Output High Voltage

Output Low Voltage

IOH = -5 mA

IOL = 4.2 mA

SYM.

Vcc

Vss

VIH

VIL

ILI

ILO

VOH

VOL

MIN

4.5

0

2.4

-1.0

-10

-10

2.4

0

MAX

5.5

0

Vcc+1

0.8

10

10

Vcc

0.4

UNITS

V

V

V

V

uA

uA

NOTES

1

1

1

V

V

Note: 1.All Voltages referenced to Vss

MAX

DESCRIPTION

Operating Current

CONDITIONS

RAS , CAS cycling , tRC = min

SYM. -45

Icc1 190

-60 UNITS NOTES

170 mA 1,2

TTL Standby Current

TTL interface, RAS ,

Icc2 2.0 2.0 mA

CAS =VIH, DOUT=High-Z

RAS -only refresh Current tRC = min

Fast Page Mode Current tPC = min

CAS Before RAS Refresh tRC = min

Current

Icc3 190 170 mA

2

Icc4 150 130 mA 1,3

Icc5 190 170 mA

CMOS Standby Current CMOS interface, RAS , CAS >Vcc- Icc6 1.0 1.0 mA

1

0.2V

Note: 1. Icc depends on output load condition when the device is selected.

Icc max is specified at the output open condition.

2. Address can be changed twice or less while RAS = VIL.

3. Address can be changed once or less while CAS = VIH.

Taiwan Memory Technology, Inc. reserves the right P. 3

to change products or specifications without notice.

Publication Date: APR. 2002

Revision:A

Share Link: