T14L256A(2001) Ver la hoja de datos (PDF) - Taiwan Memory Technology

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T14L256A
(Rev.:2001)

32K X 8 HIGH SPEED CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

CAPACITANCE

(Vcc = 3.3V, Ta = 25°C, f = 1 MHz)

PARAMETER

Input Capacitance

Input/ Output Capacitance

SYMBOL

CIN

CI /O

CONDITION

VIN = 0V

VOUT= 0V

Note: These parameters are sampled but not 100% tested.

T14L256A

MAX.

6

8

UNIT

pF

pF

AC TEST CONDITIONS

PARAMETER

Input Pulse Levels

Input Rise and Fall Times

Input and Output Timing Reference Level

Output Load

CONDITIONS

0V to 3V

3 ns

1.5V

CL =30pF,IOH/IOL= -4mA/8mA

AC TEST LOADS AND WAVEFORM

3.3V

OUTPUT

R1 320 ohm

30pF

Including

Jig and

Scope

3.3V

OUTPUT

R2

350 ohm

R1 320 ohm

5pF

Including

Jig and

Scope

R2

350 ohm

(For TCLZ, TOLZ, TCHZ, TOHZ, TWHZ, TOW )

3.0V

0V

3ns

90% 90%

10% 10%

3ns

Taiwan Memory Technology, Inc. reserves the right P. 3

to change products or specifications without notice.

Publication Date: APR. 2001

Revision: E

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