SXT 2222 A
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
Collector-base breakdown voltage
IC = 10 µA
Emitter-base breakdown voltage
IE = 10 µA
Collector-base cutoff current
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0, TA = 125 ˚C
Collector cutoff current
VCE = 30 V, VBE = 0.5 V
Emitter-base cutoff current
VEB = 3 V, IC = 0
Base cutoff current
VCE = 30 V, VBE = – 3 V
DC current gain
IC = 100 µA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V, TA = – 55 ˚C
IC = 150 mA, VCE = 10 V
IC = 150 mA, VCE = 1 V
IC = 500 mA, VCE = 10 V
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 40
–
V(BR)CB0 75
–
V(BR)EB0 6
–
ICB0
–
–
–
–
ICEX
–
–
IEB0
–
–
IBL
–
–
hFE
VCEsat
VBEsat
35
–
50
–
75
–
35
–
100 –
50
–
40
–
–
–
–
–
0.6 –
–
–
–
V
–
–
10 nA
10
µA
10 nA
10
20
–
–
–
–
–
300
–
–
V
0.3
1.0
1.2
2.0
1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2