S10PF30L Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

S10PF30L

P-CHANNEL 30V - 0.012 Ω - 10A SO-8 STripFET™ II POWER MOSFET

STMicroelectronics 

STS10PF30L

Table 4: THERMAL DATA

Rthj-amb (*) Thermal Resistance Junction-ambient

Max

Rthj-lead Thermal Resistance Junction-leads

Max

Tl

Maximum Lead Temperature For Soldering Purpose

Typ

Tstg

storage temperature

(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t bÃ10 sec.

47

16

150

-55 to 150

°C/W

°C/W

°C

°C

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

Table 5: OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

30

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

±100

nA

Table 6: ON (*)

Symbol

Parameter

VGS(th) Gate Threshold Voltage

RDS(on)

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

VGS = 4.5 V

ID = 5 A

ID = 5 A

Min.

1

Typ. Max.

0.012 0.014

0.015 0.018

Unit

V

Ω

Ω

Table 7: DYNAMIC

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

gfs

Forward Transconductance VDS = 10 V

ID = 5 A

31

S

Ciss

Input Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

2300

pF

Coss

Output Capacitance

750

pF

Crss

Reverse Transfer

Capacitance

115

pF

2/9

Share Link: