S10PF30L Ver la hoja de datos (PDF) - STMicroelectronics
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S10PF30L Datasheet PDF : 9 Pages
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STS10PF30L
P-CHANNEL 30V - 0.012 Ω - 10A SO-8
STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STS10PF30L
30V <0.014 Ω 10 A
■ TYPICAL RDS(on) = 0.012 Ω
■ STANDARDOUTLINEFOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
Figure 1:Package
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance.
SO-8
APPLICATIONS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ LOAD SWITCH
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
SALES TYPE
STS10PF30L
MARKING
S10PF30L
PACKAGE
SO-8
PACKAGING
TAPE & REEL
Table 3: ABSOLUTE MAXIMUM RATING
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
May 2005
Value
Unit
30
V
30
V
± 16
V
10
A
6
A
40
A
2.5
W
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
Rev. 2.0
1/9
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