STF202-22 Ver la hoja de datos (PDF) - ON Semiconductor
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STF202-22 Datasheet PDF : 8 Pages
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STF202–22
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Device
Device VRWM
Marking (Volts)
VBR @
1 mA
(Volts)
Min Max
Max IR
@ VRWM
= 5.25 V
VBUS to
GND
(mA)
Max IR
@ VRWM
= 3.3 V
I/O Pin
(mA)
Typical Line
Capacitance
(pF)
(Notes 2, 3)
Series Resistor
RS (W) (Note 1)
Min Nom Max
STF202–22T1 S22
5.25 6.0 8.0
5.0
1.0
68
20 22 24
1. For other RS values (i.e. RS = 30 W) contact your local ON Semiconductor sales representative.
2. Measured at 25°C, VR = 0 V, f = 1 MHz, Pins 2, 3, 4 or 5 to GND with Pin 1 also grounded.
3. For other capacitance values contact your local ON Semiconductor sales representative.
Pull–up Resistor
Rup (kW)
Min Nom Max
1.35 1.5 1.65
TYPICAL CHARACTERISTICS
10
0
–10
P = –25 dBm
–20
Vdc = 0 V
–30
–40
–50
–60
–70
–80
–90
0.1
1
10
(MHz)
100
1000
Figure 1. Analog Cross–talk (D+ to D–)
50
40
30
P = –25 dBm
20
Vdc = 0 V
10
0
–10
–20
–30
–40
–50
0.1
1
10
(MHz)
100
1000
Figure 2. Insertion Loss Characteristics
22.2
22.0
RS– TARGET
21.8
21.6
21.4
21.2
21.0
–30 –20 –10
0 10 20 30 40 50 60 70 80
TEMPERATURE (°C)
Figure 3. RS versus Temperature
1540
1530
1520
TARGET
1510
1500
1490
1480
1470
1460
1450
–30 –20 –10
0 10 20 30 40 50 60 70 80
TEMPERATURE (°C)
Figure 4. Rup versus Temperature
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