2N4391 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
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Fabricante
2N4391 Datasheet PDF : 7 Pages
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2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Noise Voltage vs. Frequency
100
VDS = 10 V
10
ID = 1 mA
ID = 10 mA
Forward Transconductance and Output onductance
vs. Gate-Source Cutoff Voltage*
50
500
gfs and gos @ VDS = 20 V
VGS = 0 V, f = 1 kHz
40
400
30
gfs
gos
200
20
200
10
100
1
10
100
1k
10 k
f – Frequency (Hz)
100 k
10 nA
1 nA
Gate Leakage Current
IGSS @ 125_C
TA = 125_C
ID = 10 mA
100 pA
1 mA
1 mA
10 pA
1 pA
TA = 25_C
10 mA
IGSS @ 25_C
0.1 pA
0
IG(on) @ ID
6
12
18
24
30
VDG – Drain-Gate Voltage (V)
Common-Gate Forward Admittance
100
VDG = 10 V
ID = 10 mA
TA = 25_C
–gfg
bfg
10
gfg
1
0
0
0
–2
–4
–6
–8
–10
VGS(off) – Gate-Source Cutoff Voltage (V)
Common-Gate Input Admittance
100
VDG = 10 V
ID = 10 mA
TA = 25_C
gig
10
big
1
0.1
100
200
500
f – Frequency (MHz)
1000
Common-Gate Reverse Admittance
10
VDG = 10 V
ID = 10 mA
TA = 25_C
1.0
–brg
–grg
0.1
+grg
0.1
100
200
500
f – Frequency (MHz)
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
1000
0.01
100
200
500
f – Frequency (MHz)
1000
www.vishay.com
7-5
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