2N4391 Ver la hoja de datos (PDF) - Vishay Semiconductors
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2N4391 Datasheet PDF : 7 Pages
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2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
100
200
rDS @ ID = 1 mA, VGS = 0 V
IDSS @ VDS = 20 V, VGS = 0 V
80
160
60
rDS
IDSS
120
40
80
20
40
0
0
0
–2
–4
–6
–8
–10
VGS(off) – Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
200
ID = 1 mA
rDS changes X 0.7%/_C
160
120
VGS(off) = –2 V
80
–4 V
40
–8 V
0
–55 –35 –15 5
25 45 65 85 105 125
TA – Temperature (_C)
Turn-Off Switching
30
td(off) independent of device VGS(off)
VDD = 5 V, VGS(L) = –10 V
24
18
VGS(off) = –2 V
12
tf
td(off)
6
VGS(off) = –8 V
0
0
2
4
6
8
10
ID – Drain Current (mA)
www.vishay.com
7-4
On-Resistance vs. Drain Current
100
TA = 25_C
80
VGS(off) = –2 V
60
40
–4 V
20
–8 V
0
1
10
100
ID – Drain Current (mA)
Turn-On Switching
5
tr approximately independent of ID
VDD = 5 V, RG = 50 W
VGS(L) = –10 V
4
tr
3
td(on) @
ID = 12 mA
2
td(on) @
1
ID = 3 mA
0
0
30
24
–2
–4
–6
–8
–10
VGS(off) – Gate-Source Cutoff Voltage (V)
Capacitance vs. Gate-Source Voltage
f = 1 MHz
VDS = 0 V
18
12
6
0
0
Ciss
Crss
–4
–8
–12
–16
–20
VGS – Gate-Source Voltage (V)
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
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