2N4392 Ver la hoja de datos (PDF) - Linear Integrated System
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2N4392 Datasheet PDF : 3 Pages
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Linear Integrated Systems
2N/PN/SST4391
SERIES
SINGLE N-CHANNEL JFET SWITCH
FEATURES
Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393
LOW ON RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS1
rDS(on) ≤ 30Ω
tON ≤ 15ns
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature (2N)
-65 to 200°C
Storage Temperature (PN/SST)
-55 to 150°C
Junction Operating Temperature (2N)
-55 to 200°C
Junction Operating Temperature (PN/SST) -55 to 150°C
Maximum Power Dissipation
Continuous Power Dissipation (2N)
1800mW
Continuous Power Dissipation (PN/SST)
350mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain or Source (2N/PN)
-40V
Gate to Drain or Source (SST)
-35V
2N SERIES PN SERIES SST SERIES
TO-18
TO-92
SOT-23
BOTTOM VIEW BOTTOM VIEW TOP VIEW
D2
3G
D1
DSG
3G
S1
123
S2
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
4391
4392
4393
TYP
UNIT
MIN MAX MIN MAX MIN MAX
BVGSS
Gate to Source
Breakdown Voltage
2N/PN
SST
-40
-35
-40
-35
-40
-35
VGS(off)
Gate to Source
Cutoff Voltage
2N/PN
SST
-4 -10 -2
-4 -10 -2
-5 -0.5 -3
-5 -0.5 -3
V
VGS(F) Gate to Source Forward Voltage
0.7
1
1
1
0.25
0.4
VDS(on) Drain to Source On Voltage
0.3
0.4
0.35
0.4
IDSS
Drain to Source
Saturation Current2
2N
PN
SST
50 150 25 75 5
50 100 25 100 5
50
25
5
30
60 mA
2N/SST -5
IGSS Gate Leakage Current
PN
-5
-100
-1000
-100
-1000
-100
-1000 pA
IG Gate Operating Current
-5
CONDITIONS
IG = -1µA, VDS = 0V
VDS = 20V, ID = 1nA
VDS = 15V, ID = 10nA
IG = 1mA, VDS = 0V
VGS = 0V, ID = 3mA
VGS = 0V, ID = 6mA
VGS = 0V, ID = 12mA
VDS = 20V, VGS = 0V
VGS = -20V, VDS = 0V
VDG = 15V, ID = 10mA
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
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