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SMBJ12AON

600 Watt Peak Power Zener Transient Voltage Suppressor

ON Semiconductor 

SMBJ12AON

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms

DC Power Dissipation @ TL = 75°C

Measured Zero Lead Length (Note 2)

Derate Above 75°C

Thermal Resistance from Junction to Lead

PPK

PD

RqJL

600

W

3.0

W

40

mW/°C

25

°C/W

DC Power Dissipation (Note 3) @ TA = 25°C

Derate Above 25°C

Thermal Resistance from Junction to Ambient

PD

RqJA

0.55

W

4.4

mW/°C

226

°C/W

Operating and Storage Temperature Range

TJ, Tstg

-65 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. 10 X 1000 ms, non-repetitive at maximum IPPM and VCM, see electrical characteristics.

2. 1″ square copper pad, FR-4 board

3. FR-4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless

otherwise noted, VF = 3.5 V Max. @ IF (Note 4) = 30 A)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,

non-repetitive duty cycle.

I

IF

VC VBR VRWM

IIRT VF

V

IPP

Uni-Directional TVS

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Conditions

Symbol

Min

Zener Voltage (Note 5)

Reverse Leakage Current

Clamping Voltage

IT = 1 mA

VRWM = 12 V

IPPM = 30.2 A

(Per Figure 1, Note 6)

VZ

IR

VCM

13.2

5. VZ measured at pulse test IT at an ambient temperature of 25°C.

6. Absolute Maximum Peak Current, IPPM.

Typ

13.75

Max

Unit

14.3

V

5.0

mA

19.9

V

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