SI3446DV Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI3446DV Datasheet PDF : 5 Pages
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Si3446DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
10
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
ID = 5.3 A
TJ = 150_C
TJ = 25_C
0.06
0.04
0.02
1
0.00 0.25 0.50 0.75 1.00 1.25 1.50
VSD – Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.00
0
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Single Pulse Power
25
0.2
20
–0.0
ID = 250 mA
15
–0.2
10
–0.4
5
–0.6
–50 –25
0 25 50 75 100 125 150
TJ – Temperature (_C)
0
0.01
0.10
1.00
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
10.00
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
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4
10–2
S
10–1
()
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
1
10
Document Number: 70715
S-51451—Rev. C, 01-Aug-05
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