SDT10S30 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

SDT10S30

Silicon Carbide Schottky Diode

Infineon Technologies 

SDP10S30, SDB10S30

SDT10S30

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics

Total capacitive charge1)

VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C

Switching time2)

VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C

Qc

-

23

- nC

trr

- n.a. - ns

Total capacitance

C

pF

VR=0V, TC=25°C, f=1MHz

VR=150V, TC=25°C, f=1MHz

VR=300V, TC=25°C, f=1MHz

-

600

-

-

55

-

-

40

-

Rev. 1.1

Page 3

2004-04-05

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