SDT10S30 Ver la hoja de datos (PDF) - Infineon Technologies
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SDT10S30 Datasheet PDF : 9 Pages
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Silicon Carbide Schottky Diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• No forward recovery
P-TO220-2-2.
SDP10S30, SDB10S30
SDT10S30
thinQ! SiC Schottky Diode
Product Summary
VRRM
300 V
Qc
23 nC
IF
10 A
P-TO220-3.SMD P-TO220-3-1.
Type
SDP10S30
SDB10S30
SDT10S30
Package
Ordering Code
P-TO220-3-1. Q67040-S4372
P-TO220-3.SMD Q67040-S4373
P-TO220-2-2. Q67040-S4447
Marking
D10S30
D10S30
D10S30
Pin 1
n.c.
n.c.
C
Pin 2
C
C
A
Pin 3
A
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
IFRM
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
IFMAX
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
∫i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
VRSM
Ptot
Operating and storage temperature
Tj , Tstg
Value
10
14
36
45
100
6.5
300
300
65
-55... +175
Unit
A
A²s
V
W
°C
Rev. 1.1
Page 1
2004-04-05
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