S3C Ver la hoja de datos (PDF) - Galaxy Semi-Conductor
Número de pieza
componentes Descripción
Fabricante
S3C Datasheet PDF : 3 Pages
| |||
Production specification
SURFACEMOUNTRECTIFIERS
S3A--S3M
FEATURES
Low profile package
Pb
For surface mounted applications
Lead-free
High current capability
Built-in strain relief, ideal for automated placement
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
High temperature soldering: 250℃/10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AB,molded plastic over passivated chip
Terminals: Solder Plated, solderable per MIL-STD- 750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
Maximum Ratings(@TA = 25°C unless otherwise specified)
Characteristic
Symbol S3A
S3B
S3C
S3D
S3G S3J S3K S3M UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=100℃
Peak forward surge current @ TL = 110°C
8.3mssingle half-sine-wave superimposed
on rated load(JEDEC Method)
Thermal Characteristics
VRRM
50
100
150
200
400 600 800 1000
V
VRWS
35
70
105
140
280 420
560
700
V
VDC
50
100
150
200
400 600 800 1000
V
IF(AV)
3.0
A
IFSM
100
A
Characteristic
Symbol S3A
S3B
S3C
S3D
S3G S3J S3K S3M UNITS
Typical junction capacitance (NOTE 1)
CJ
30
Typical thermal resistance (NOTE 2)
R θJA
R θJL
53.0
16.0
Operating junction and storage temperature range TJ TSTG
-55--------+150
Electrical Characteristics (@TA = 25°C unless otherwise specified)
pF
℃/W
℃
Characteristic
Symbol S3A
S3B
S3C
S3D
S3G S3J S3K S3M UNITS
Maximum Instantaneous Forward Voltage at 3.0A
VF
1.15
V
Maximum DC reverse current TA=25℃
IR
at rated DC blocking voltage TA=125℃
10.0
μA
125
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
2. Thermal resistance from junction to ambient and junction to lead P.C.B. mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas
Document Number : SMC001AA
www.gmicroelec.com
1
Share Link: 