S330D(2004) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

S330D
(Rev.:2004)

Standard Avalanche Sinterglass Diode

Vishay Semiconductors 

VISHAY

S330D

Vishay Semiconductors

100

10

TJT=175 °C

1

0.1

TJ=25 °C

0.01

0.001

0.0 0.5 1.0

17215

1.5 2.0 2.5 3.0 3.5 4.0

VF (V)

Figure 5. Typ. Forward Current vs. Forward Voltage

Package Dimensions in mm (Inches)

Sintered Glass Case

SOD-57

Cathode Identification

0.5

0.45

0.4

0.35

0.3

PR–Limit

@100%VR

0.25

0.2

0.15

0.1

0.05

PR–Limit

@80%VR

025 50 75 100 125 150 175

17216

Tj ( °C )

Figure 6. Max. Reverse Power Dissipation vs. Junction

Temperature

3.6 (0.140)max.

ISO Method E

94 9538

0.82 (0.032) max.

26(1.014) min.

4.0 (0.156) max.

26(1.014) min.

Document Number 86053

Rev. 1.5, 11-Aug-04

www.vishay.com

3

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