BA582 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BA582

Silicon RF Switching Diode

Siemens AG 

BA 582

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Forward voltage

VF

IF = 100 mA

Reverse current

IR

VR = 20 V

Diode capacitance

CT

f = 1 MHz

VR = 1 V

VR = 3 V

Forward resistance

rf

f = 100 MHz

IF = 3 mA

IF = 10 mA

Reverse resistance

1/gp

VR = 1 V, f = 100 MHz

Series inductance

LS

min.

–

–

–

0.6

–

–

–

–

Values

Unit

typ.

max.

–

1

V

–

20

nA

pF

0.92

1.4

0.85

1.1

Ω

0.45

0.7

0.38

0.5

100

–

kΩ

2.8

–

nH

Diode capacitance CT = f (VR)

f = 1 MHz

Forward resistance rf = f (IF)

f = 100 MHz

Semiconductor Group

2

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