PZTA14(2008) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
PZTA14 Datasheet PDF : 6 Pages
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NPN Silicon Darlington Transistor
• For general AF applications
• High collector current
• High current gain
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
PZTA14
4
3
2
1
Type
PZTA14
Marking
Pin Configuration
PZTA14 1=B 2=C 3=E 4=C -
-
Package
SOT223
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
TS ≤ 124 °C
Junction temperature
Storage temperature
VCES
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Thermal Resistance
Parameter
Junction - soldering point2)
Symbol
RthJS
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
Value
30
30
10
300
500
100
200
1.5
150
-65 ... 150
Value
≤ 17
Unit
V
mA
W
°C
Unit
K/W
1
2008-03-07
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