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PTB20101

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor 

PTB20101

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI PTB20101 is Designed for

General Purpose Class AB Power

Amplifier Applications up to 860 MHz.

FEATURES:

• 175 W, 470-860 MHz

• Silicon Nitride Passivated

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

20 A

VCBO

65 V

PDISS

330 W @ TC = 25 °C

TJ

-40 °C to +150 °C

TSTG

-40 °C to +150 °C

θJC

0.53 °C/W

PACKAGE STYLE .860 4L FLG

1,5 = COLLECTOR 3 = EMITTER 2,4 = BASE

CHARACTERISTICS TC = 25 °C

SYMBOL

NONETEST CONDITIONS

BVCEO

IC = 100 mA

BVCES

IC = 100 mA

BVEBO

IE = 5.0 mA

hFE

VCE = 5.0 V

IC = 1.0 A

COB

VCB = 28 V

f = 1.0 MHz

MINIMUM TYPICAL MAXIMUM

25

55

3.5

20

100

3.5

5

UNITS

V

V

V

---

pF

PG

ηC

VCC = 28 V

ICQ = 2x200 mA

POUT = 110 W

f = 860 MHz

8.5

55

11

58

dB

%

POUT

175

W

Ψ

VCC = 28 V

POUT = 175 W

f = 860 MHz

ICQ = 2x200 mA

5:1

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A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. C

1/1

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