PN300 Ver la hoja de datos (PDF) - Panasonic Corporation
Número de pieza
componentes Descripción
Fabricante
PN300 Datasheet PDF : 4 Pages
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PIN Photodiodes
PNZ300 (PN300), PNZ300F (PN300F)
Silicon planar type
PAZ300
φ4.6±0.15
Unit: mm
Glass lens
For optical control systems
■ Features
• Fast response which is well suited to high speed modulated light
detection
• Wide spectral sensitivity
• Low dark current and low noise
• Good photo current linearity and wide dynamic sensitivity
• Narrow directivity (PNZ300)
• Wide derectivity (PNZ300F)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
VR
50
V
PD
100
mW
Topr −25 to +85 °C
Tstg −30 to +100 °C
PAZ300F
2-φ0.45±0.05
1.0±0.15
2.54±0.25
1.0±0.2
21
φ5.75 max.
1: Anode
2: Cathode
MTGLR102-001 Package
φ4.6±0.15
Unit: mm
Glass window
2-φ0.45±0.05
2.45±0.25
1.0±0.15
1.0±0.2
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
21
1: Anode
φ5.75 max.
2: Cathode
MTGFR102-001 Package
Parameter
Symbol
Conditions
Min Typ Max Unit
Dark current
Photocurrent *1
ID
PNZ300
IL
PNZ300F
VR = 10 V
VR = 10 V, L = 1 000 lx
0.1 10
nA
30 55
µA
5
7
Peak emission wavelength
Rise time *2
Fall time *2
Terminal capacitance
Half-power angle
PNZ300
λp
VR = 10 V
tr
VR = 20 V, RL = 50 Ω
tf
Ct
VR = 10 V, f = 1 MHz
θ The angle from which photocurrent
800
nm
1
ns
1
ns
7
pF
10
°
PNZ300F
becomes 50%
40
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4. *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
Sig. in
λP = 900 nm
50 Ω
VR
(Input pulse)
Sig. out
(Output pulse)
RL
tr
90%
10%
tf
tr: Rise time
tf: Fall time
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2004
SHE00030BED
1
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