PN2907A(2005) Ver la hoja de datos (PDF) - Unisonic Technologies
Número de pieza
componentes Descripción
Fabricante
PN2907A Datasheet PDF : 6 Pages
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PN2907A
TYPICAL CHARACTERISTICS
Typical Pulsed Current Gain vs Collector Current
500
400 125℃
VCE =5V
300
200
25℃
100
-40℃
0
0.1 0.3 1 3 10 30 100 300
COLLECTOR CURRENT, IC (mA)
PNP EPITAXIAL SILICON TRANSISTOR
Collector-Emitter Saturation Voltage
vs Collector Current
1 β=10
0.8
0.6
0.4
0.2
0
1
25℃
125℃
10
-40℃
100
500
COLLECTOR CURRENT, IC (mA)
Base-Emitter Saturation Voltage vs
Collector Current
1
-40℃
0.8
25℃
0.6
0.4
125℃
0.2
0
1
β =10
10
100
500
COLLECTOR CURRENT, IC (mA)
Base Emitter ON Voltage vs Collector
Current
1
0.8
-40℃
0.6
0.4
0.2
0
0.1
25℃
125℃
VCE=5V
1
10 25
COLLECTOR CURRENT, IC (mA)
Collector-Cutoff Current vs Ambient
Temperature
100
VCB=35V
10
1
0.1
0.01
25
50
75
100
125
AMBIENT TEMP ERATURE, Ta (℃)
Input and Output Capacitance vs Reverse
Bias Voltage
20
16
12
Cib
8
4
Cob
0
-0.1
-1
-10
-50
REVERSE BIAS VOLTAGE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4
QW-R201-041.B
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