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PN2907A
(Rev.:2005)

PNP GENERAL PURPOSE AMPLIFIER

Unisonic Technologies 

PN2907A

PNP EPITAXIAL SILICON TRANSISTOR

ABSOLUATE MAXIUM RATINGS (Note 1) (Ta=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

VCEO

60

V

Collector-Base Voltage

VCBO

60

V

Emitter-Base Voltage

VEBO

5

V

Collector Current-Continuous

IC

800

mA

Power Dissipation

625

mW

Derate above 25°C

PD

5.0

mW/°C

Junction Temperature

Storage Temperature

TJ

TSTG

+150

°C

-40 ~ +150

°C

Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be

impaired.

Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty

cycle operations.

Note 3: All voltage (V) and currents (V) are negative polarity for PNP transistors.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage* V(BR)CEO IC=10mA, IB=0

60

Collector-Base Breakdown Voltage

V(BR)CBO IC=10µA, IE=0

60

Emitter-Base Breakdown Voltage

V(BR)EBO IE=10µA , IC=0

5

Base Cutoff Current

IB

VCB=30V, VEB=0.5V

Collector Cutoff Current

ICEX VCE=30V, VBE=0.5V

Collector Cutoff Current

ICBO

VCB=50V, IE=0

VCB=50V, IE=0, Ta=150°C

ON CHARACTERISTICS

DC Current Gain

Ic=0.1mA, VCE=10V

75

Ic=1.0 mA, VCE=10V

100

hFE Ic=10 mA, VCE=10V

100

Ic=150 mA, VCE=10V*

100

Ic=500 mA, VCE=10V*

50

Collector-Emitter Saturation Voltage*

VCE(sat)

Ic=150mA, IB=15mA

Ic=500mA, IB=50mA

Base-Emitter Saturation Voltage

VBE(sat)

Ic=150mA, IB=15mA*

Ic=500mA, IB=50mA

SMALL SIGNAL CHARACTERISTICS

Current Gain – Bandwidth Product

fT

Ic=50mA, VCE=20V, f=100MHz 200

Output Capacitance

Cobo VCB=10V, IE=0, f=100kHz

Input Capacitance

Cibo VEB=2V, IC=0, f=100kHz

SWITCHING CHARACTERISTICS

Turn-on Time

Delay Time

Rise Time

tON

Vcc=30V, Ic=150mA

tDLY

tR

IB1=15mA

Turn-off Time

Storage Time

Fall Time

tOFF Vcc=6V, Ic=150mA

tS

tF

IB1=IB2=15mA

* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle≤2.0%

Note: All voltages (V) and currents (A) are negative polarity for PNP transistors

TYP

MAX UNIT

V

V

V

50 nA

50 nA

0.02 µA

20 µA

300

0.4 V

1.6 V

1.3 V

2.6 V

MHz

8

pF

30 pF

45 ns

10 ns

40 ns

100 ns

80 ns

30 ns

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2

QW-R201-041.B

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