PN2907A Ver la hoja de datos (PDF) - Transys Electronics Limited
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componentes Descripción
Fabricante
PN2907A Datasheet PDF : 3 Pages
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Transys
Electronics
LIMITED
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
PN2907
PN2907A
TO-92
Plastic Package
EBC
Complementary Silicon Transistors for Switching and Linear Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25 º C unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation@ Ta=25 º C
PD
Derate Above 25 º C
Power Dissipation@ Tc=25 º C
PD
Derate Above 25 º C
Operating And Storage Junction
Tj, Tstg
Temperature Range
PN2907
40
60
5
600
625
5.0
1.5
12
-55 to +150
PN2907A
60
60
5
UNITS
V
V
V
mA
mW
mW/ º C
W
mW/ º C
ºC
THERMAL RESISTANCE
Junction to ambient
Junction to case
Rth(j-a)
Rth(j-c)
200
º C/W
83.3
º C/W
ELECTRICAL CHARACTERISTICS (Ta=25 º C Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION PN2907
Collector Emitter Voltage
BVCEO IC=10mA,IB=0
>40
Collector Base Voltage
BVCBO IC=10µA,IE=0
>60
Emitter Base Voltage
BVEBO IE=10µA, IC=0
>5
Collector Cut off Current
ICBO VCB=50V, IE = 0
<20
PN2907A
>60
>60
>5
<10
UNITS
V
V
V
nA
Emitter Cut off Current
Base Cut off Current
DC Current Gain
Ta= 150 º C
VCB=50V, IE = 0
<20
ICEX
VCE =30V, VEB=0.5V
<50
ICEO VCE=10V, IB = 0
<10
IEBO
VEB=3V, IC = 0
<10
IBEX
VCE =30V, VEB=0.5V
<50
hFE
VCE=10V,IC=0.1mA
>35
VCE=10V,IC=1mA
>50
VCE=10V,IC=10mA
>75
VCE=10V*,IC=150mA 100-300
VCE=10V*,IC=500mA
>30
<10
µA
<50
nA
<10
nA
<10
nA
<50
nA
>75
>100
>100
100-300
>50
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