NXP Semiconductors
PMSTA55; PMSTA56
500 mA PNP general-purpose transistors
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max
[1] -
-
625
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off
current
PMSTA55
VCB = −60 V; IE = 0 A
PMSTA56
VCB = −80 V; IE = 0 A
IEBO
emitter-base cut-off VEB = −4 V; IC = 0 A
current
hFE
VCEsat
VBE
fT
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
transition frequency
VCE = −1 V;
IC = −10 mA
VCE = −1 V;
IC = −100 mA
IC = −100 mA;
IB = −10 mA
IC = −100 mA;
VCE = −1 V
VCE = −1 V;
IC = −100 mA;
f = 100 MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
-
-
-
-
-
-
100 -
[1] 100
-
-
-
-
-
50
-
−100 nA
−100 nA
−500 nA
-
-
−250 mV
−1.2 mV
-
MHz
PMSTA55_56_5
Product data sheet
Rev. 05 — 1 February 2010
© NXP B.V. 2010. All rights reserved.
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