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PMBT2907 Datasheet PDF : 8 Pages
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NXP Semiconductors
PNP switching transistors
Product data sheet
PMBT2907; PMBT2907A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector-base cut-off current
IE = 0; VCB = −50 V
PMBT2907
PMBT2907A
collector-base cut-off current
PMBT2907
IE = 0; VCB = −50 V; Tj = 125 °C
PMBT2907A
IEBO
emitter-base cut-off current
IC = 0; VEB = −5 V
hFE
DC current gain
IC = −0.1 mA; VCE = −10 V
PMBT2907
PMBT2907A
DC current gain
PMBT2907
IC = −1 mA; VCE = −10 V
PMBT2907A
DC current gain
PMBT2907
IC = −10 mA; VCE = −10 V
PMBT2907A
DC current gain
DC current gain
PMBT2907
IC = −150 mA; VCE = −10 V
IC = −500 mA; VCE = −10 V
PMBT2907A
VCEsat
VBEsat
Cc
Ce
fT
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
IC = −150 mA; IB = −15 mA
IC = −500 mA; IB = −50 mA
IC = −150 mA; IB = −15 mA
IC = −500 mA; IB = −50 mA
IE = Ie = 0; VCB = −10 V; f = 1 MHz
IC = Ic = 0; VEB = −2 V; f = 1 MHz
IC = −50 mA; VCE = −20 V; f = 100 MHz
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = −150 mA; IBon = −15 mA;
IBoff = 15 mA
MIN.
−
−
−
−
−
35
75
50
100
75
100
100
30
50
−
−
−
−
−
−
200
−
−
−
−
−
−
MAX. UNIT
−20 nA
−10 nA
−20 µA
−10 µA
−50 nA
−
−
−
−
−
−
300
−
−
−400
−1.6
−1.3
−2.6
8
30
−
mV
V
V
V
pF
pF
MHz
40
ns
12
ns
30
ns
365 ns
300 ns
65
ns
2004 Jan 16
4
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