PHM12NQ20T Ver la hoja de datos (PDF) - Philips Electronics
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PHM12NQ20T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHM12NQ20T
TrenchMOS™ standard level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 150 °C
Tj = −55° C
VDS = 160 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±10 V; VDS = 0 V
VGS = 10 V; ID = 12 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 5 V; ID = 3 A
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 4 A; VDD = 100 V; VGS = 10 V; Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12
VDD = 100 V; ID = 4 A; VGS = 10 V; RG = 6 Ω
VSD
source-drain (diode forward) voltage IS = 4 A; VGS = 0 V; Figure 11
trr
reverse recovery time
Qr
recovered charge
IS = 4 A; dIS/dt = −100 A/µs; VR = 120 V;
VGS = 0 V
Min Typ Max Unit
200 -
-
V
178 -
-
V
234V
1.2 -
-
V
-
-
6V
-
-
1 µA
-
-
100 µA
-
10 100 nA
-
108 130 mΩ
-
260 312 mΩ
-
110 150 mΩ
-
26 -
nC
-
4-
nC
-
8.7 -
nC
-
1230 -
pF
-
155 -
pF
-
48 -
pF
-
12.5 -
ns
-
10.2 -
ns
-
34.5 -
ns
-
13.5 -
ns
-
0.71 1.2 V
-
104 -
ns
-
245 -
nC
9397 750 10876
Preliminary data
Rev. 01 — 30 January 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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