P4KE480A Ver la hoja de datos (PDF) - MDE Semiconductor
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P4KE480A Datasheet PDF : 3 Pages
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MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414
1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com
RATING AND CHARACTERISTIC CURVES P4KE SERIES
Fig. 1 - Peak Pulse Power Rating
100
Non-repetitive Pulse
Waveform shown in Fig.
3
Fig.2 - Pulse Derating Curve
100
75
10
50
1
25
0.1
0.1µs
150
100
1.0µs
10µs
100µs
1.0ms
10ms
td - Pulse Width (sec.)
Fig.3 - Pulse Waveform
tr = 10µsec.
Peak Value
IPPM
Half Value- IPPM
2
TJ = 25°C
Pulse Width(td)is
defined
as the point where the
peak current decays to
50% of I
50
10/1000µsec.Waveform
as defined by R.E.A.
td
0
0
1.0
2.0 3.0
3. 4.0
4.0
t - Time(ms)
Fig.5 - steady State Power Derating Curve
1.00
L=0.375" (9.5mm)
60 HZ Resistive or
0.88 Lead Lengths
Inductive Load
0.75
0.63
0.50
0.38
1.6x1.6x.040"
(40x40x1mm)
0.25
Copper Heat Sinks
0.13
0.00
0
25 T5L0 - Lea75d Tem10p0eratu12r5e (°C1)50 175 200
Fig.7 - Typical Reverse Leakage Characteristics
100
Measured at Devices
10
Stand-off Voltage,VWM
TA = 25°C
1
0.1
0.01
0
50 100 150 200 250 300 350 400 450 500
V(BR) - Breakdown Voltage
0
0
0.2
0.4
0.6
0.8
1
1.2
TA - Ambient Temperature (°C)
Fig.4 - Typ.Junction Capacitance Uni-Directional
10000
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
1000
Measured at Zero Bias
100
1000
10
1.0
200
100
Measured at
Stand-Off
Voltage, VWM
10
VWM - Reverse Stand-Off Voltage (V)
100
200
Fig.6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
50
10
1
5
10
50
100
Number of Cycles at 60 Hz
Fig. 8 - Typ.Transient Thermal Impedance
100
10
1
0.001
0.01
0.1
1
10
tp-Pulse Duration (sec)
100
1000
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