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NTB27N06 Ver la hoja de datos (PDF) - ON Semiconductor

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NTB27N06 Datasheet PDF : 12 Pages
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NTP27N06, NTB27N06
SAFE OPERATING AREA
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10 µs
10
100 µs
1 ms
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
dc
1
10
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
200
ID = 27 A
175
150
125
100
75
50
25
0
25
50
75
100
125
150 175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
0.1
0.0001
0.01
0.001
0.01
0.1
t, TIME (s)
1
10
Figure 13. Thermal Response
di/dt
IS
trr
ta
tb
TIME
tp
0.25 IS
IS
Figure 14. Diode Reverse Recovery Waveform
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