NT5SV16M4DT Ver la hoja de datos (PDF) - Unspecified

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componentes Descripción

Fabricante

NT5SV16M4DT

64Mb Synchronous DRAM

Unspecified 

NT5SV16M4DT

NT5SV8M8DT

NT5SV4M16DT

64Mb Synchronous DRAM

Block Diagram

CKE CKE Buffer

CLK

CLK Buffer

A0

A1

A2

A3

A4

A5

A6

A7

A8

A9

A11

BS0

BS1

A10

Column Decoder

Cell Array

Memory Bank 0

Sense Amplifiers

Column Decoder

Cell Array

Memory Bank 1

Sense Amplifiers

DQ0

DQX

CS

RAS

CAS

WE

Column Decoder

Cell Array

Memory Bank 2

Sense Amplifiers

DQM

Column Decoder

Cell Array

Memory Bank 3

Sense Amplifiers

Cell Array, per bank, for 4Mb x 4 DQ: 4096 Row x 1024 Col x 4 DQ (DQ0-DQ3).

Cell Array, per bank, for 2Mb x 8 DQ: 4096 Row x 512 Col x 8 DQ (DQ0-DQ7).

Cell Array, per bank, for 1Mb x 16 DQ: 4096 Row x 256 Col x 16 DQ (DQ0-DQ15).

REV 1.1

10/01

5

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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

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