NSI45025ZT1G(2009) Ver la hoja de datos (PDF) - ON Semiconductor
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NSI45025ZT1G Datasheet PDF : 6 Pages
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NSI45025ZT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Pulse Current @ Vak = 7.5 V (Note 3)
Capacitance @ Vak = 7.5 V (Note 4)
Ireg(SS)
21.25
25
28.75 mA
Voverhead
1.8
V
Ireg(P)
22
26
30
mA
C
2.6
pF
Capacitance @ Vak = 0 V (Note 4)
C
6.9
pF
1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 10 sec, using FR−4 @ 300 mm2 2 oz. Copper traces, in still air.
2. Voverhead = Vin − VLEDs. Voverhead is typical value for 75% Ireg(SS).
3. Ireg(P) non−repetitive pulse test. Pulse width t ≤ 300 msec.
4. f = 1 MHz, 0.02 V RMS.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 5) TA = 25°C
Derate above 25°C
PD
954
mW
7.6
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Junction−to−Lead 4 (Note 5)
Total Device Dissipation (Note 6) TA = 25°C
Derate above 25°C
RθJA
RψJL4
PD
131
40.8
1074
8.6
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Junction−to−Lead 4 (Note 6)
Total Device Dissipation (Note 7) TA = 25°C
Derate above 25°C
RθJA
RψJL4
PD
116
39.9
1150
9.2
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Junction−to−Lead 4 (Note 7)
Total Device Dissipation (Note 8) TA = 25°C
Derate above 25°C
RθJA
RψJL4
PD
109
42
1300
10.4
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Reference, Junction−to−Lead 4 (Note 8)
Total Device Dissipation (Note 9) TA = 25°C
Derate above 25°C
RθJA
RψJL4
PD
96
39.4
1214
9.7
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Reference, Junction−to−Lead 4 (Note 9)
Total Device Dissipation (Note 10) TA = 25°C
Derate above 25°C
RθJA
RψJL4
PD
103
40.2
1389
11.1
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10)
RθJA
90
°C/W
Thermal Reference, Junction−to−Lead 4 (Note 10)
RψJL4
37.7
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
5. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
6. FR−4 @ 100 mm2, 2 oz. copper traces, still air.
7. FR−4 @ 300 mm2, 1 oz. copper traces, still air.
8. FR−4 @ 300 mm2, 2 oz. copper traces, still air.
9. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
10. FR−4 @ 500 mm2, 2 oz. copper traces, still air.
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
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