NSF8ATHE3/45 Ver la hoja de datos (PDF) - Vishay Semiconductors
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NSF8ATHE3/45 Datasheet PDF : 5 Pages
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NS(F,B)8AT thru NS(F,B)8MT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL NS8AT NS8BT NS8DT NS8GT
Maximum
instantaneous
8.0 A TJ = 25 °C
VF
1.1
forward voltage (1)
NS8JT
NS8KT
NS8MT
UNIT
V
Maximum DC
reverse current at
rated DC blocking
voltage
TJ = 25 °C
TJ = 100 °C
IR
10
100
µA
Typical junction
capacitance
4.0 V, 1 MHz
CJ
55
pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
NSxT
NSFxT
Typical thermal resistance from junction to case RθJC
3.0
5.0
NSBxT
3.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AC
NS8JT-E3/45
1.80
ITO-220AC
NSF8JT-E3/45
1.95
TO-263AB
NSB8JT-E3/45
1.77
TO-263AB
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
NSB8JT-E3/81
NS8JTHE3/45 (1)
NSF8JTHE3/45 (1)
NSB8JTHE3/45 (1)
NSB8JTHE3/81 (1)
1.77
1.80
1.95
1.77
1.77
Note:
(1) Automotive grade AEC Q101 qualified
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape reel
Tube
Tube
Tube
Tape reel
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88690
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 08-Nov-07
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