DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NJW3281G(2008) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
NJW3281G
(Rev.:2008)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NJW3281G Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
NJW3281G (NPN) NJW1302G (PNP)
TYPICAL CHARACTERISTICS
PNP NJW1302G
1
NPN NJW3281G
1
5A
5A
3A
1A
1A
0.1
0.1
0.5 A
3A
IC = 0.1 A
0.5 A
IC = 0.1 A
0.01
0.001
TJ = 25°C
0.01
0.1
0.01
1
0.001
IB, BASE CURRENT (A)
Figure 7. Saturation Region
TJ = 25°C
0.01
0.1
1
IB, BASE CURRENT (A)
Figure 8. Saturation Region
1
IC/IB = 10
1
IC/IB = 10
0.1
25°C
0.1
25°C
125°C
-30°C
-30°C
125°C
0.01
0.01
0.1
1
0.01
10
100
0.01
0.1
1
10
100
IC, COLLECTER CURRENT (A)
IC, COLLECTER CURRENT (A)
Figure 9. VCE(sat), Collector-Emitter Saturation
Voltage
Figure 10. VCE(sat), Collector-Emitter
Saturation Voltage
1.6
VCE = 5 V
1.4
1.2
1.0
0.8
-30°C
0.6
25°C
0.4
125°C
0.2
0.0
0.01
0.1
1
10
100
IC, COLLECTER CURRENT (A)
Figure 11. VBE(on), Base-Emitter Voltage
1.6
VCE = 5 V
1.4
1.2
1.0
0.8
-30°C
0.6
25°C
0.4
125°C
0.2
0.0
0.01
0.1
1
10
100
IC, COLLECTER CURRENT (A)
Figure 12. VBE(on), Base-Emitter Voltage
http://onsemi.com
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]