NIS6111QPT1G Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NIS6111QPT1G Datasheet PDF : 8 Pages
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NIS6111
85
80
75
JA (A) − (A) Heated
70
65
60
55
JA (M) − (M) Heated
50
45
40
0
500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500
COPPER AREA (mm2)
Figure 7. Thermal Resistance vs. Copper Area for MOSFET (M) and Analog Die (A)
6000
5.15 V
Source 1
I2
15 V
5.2 V
Source 2
Load
Figure 8. Test Circuit for Short Circuit ORing Test
Figure 9. Waveforms from Short Circuit ORing Test
18 V
Reg In
5.0 V
Anode
Gate
Cathode
Load
NTD110N02R
12 V
Load
Reg In
Cathode
Anode
Figure 10. Positive ORing Diode Connection with
Additional External FETs
Figure 11. Negative ORing Diode Connection
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