NIS6111QPT1 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NIS6111QPT1 Datasheet PDF : 8 Pages
| |||
NIS6111
ELECTRICAL CHARACTERISTICS (TJ = 25°C, Reg In = 8.0 V, unless otherwise noted.)
Characteristic
Symbol
SYNCHRONOUS RECTIFIER
ON STATE
Conduction Mode ON Resistance
(I = 10 Adc, VGS = 5.0 V)
RON
(I = 20 Adc, VGS = 5.0 V)
OFF STATE
Reverse Leakage Current (VR = 24 VDC)
IDSS
Reverse Leakage Current (VR = 24 VDC, TJ = 125°C)
IDSS
SWITCHING (See Figures 1 and 3) (Note 2)
FET Turn−on Time (Imax = 3.0 A, I rev = 1.0 A, Vrev = 5.0 V)
tsat
Turnoff Propagation
tpd
Delay Time (Vds = Voffset to ID = 0)
BODY DIODE
Forward On−Voltage (Notes 1 and 3)
I = 10 Adc, VGS = 0 V
VSD
I = 20 Adc, VGS = 0 V
POWER SUPPLY (VR = 20 V, TJ = 255C)
Supply Voltage (Pin 2 to Pin 1), Internal Bias Voltage
VCC
Cap Charge Time
(0.5 V Initial Charge, 5.0 V @ Reg In, to 4.5 V, C = 0.22 mF)
tchg
TJ = −40°C to 125°C
tchg
Headroom (for Vcap = 4.7 V)
Vhd
Minimum Duty Cycle for Operation (Freq = 100 kHz) (Note 5)
dmin
Delay Time (Tamb = 20°C)
Td
Reg In Voltage (Pin 5 to Pin 1)
Minimum Voltage Required for Operation (VUVLO + Vhd)
Minimum Voltage Required for Full Gate Drive (VCC + Vhd)
CONTROL CIRCUIT
Bias Supply Current (VBIAS = 5.0 V)
Input Offset Voltage
Shutdown Voltage (UVLO)
Turn−on Voltage (UVLO)
1. Pulse width v 300 ms, duty cycle v 2%.
2. Pulse width 2.0 ms, duty cycle t5%.
3. Switching characteristics are independent of operating junction temperature.
4. Based on 0.062″ FR4 board, double−sided 1 oz copper.
5. Minimum time required to recharge internal capacitor.
IBIAS
IOS
VUVLO
VTO
Min
Typ Max Unit
−
3.7
4.5
mW
−
4.7
−
−
−
10
mA
−
−
100
mA
−
45
−
ns
−
35
−
ns
−
0.75
−
Vdc
−
0.8
1.2
4.8
5.0
5.2
V
2.0
3.7
5.0
ms
−
4.7
−
ms
1.0
1.27 1.5
V
−
2.0
−
%
51
ns
4.8
V
6.3
V
0.8
1.3
1.8
mA
−
2.0
5.0
mV
3.35 3.55 3.65
V
3.65 3.81 3.95
V
http://onsemi.com
3
Share Link: 