NIS6111QPT1 Ver la hoja de datos (PDF) - ON Semiconductor

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Fabricante

NIS6111QPT1

BERS IC (Better Efficiency Rectifier System)

ON Semiconductor 

NIS6111

MAXIMUM RATINGS (TJ = 25°C, unless otherwise noted.)

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage (VK to VA)

Peak Regulator Input (Reg In) Voltage

Average Rectified Forward Current

Non−repetitive Peak Surge Current

Analog Die Thermal Resistance (Min Copper Area)

MOSFET Die Thermal Resistance (Min Copper Area)

Analog Die Thermal Resistance (Junction−to−Top of Board)

MOSFET Die Thermal Resistance (Junction−to−Top of Board)

Analog Die Thermal Resistance (Junction−to−Bottom of Board) (Note 4)

MOSFET Die Thermal Resistance (Junction−to−Bottom of Board) (Note 4)

Storage Temperature Range

Operating Temperature Range

VRRM

Vregmax

IFAV

IFSM

qA j−a

qM j−a

qA j−t

qM j−t

qA j−b

qM j−b

Tstg

TJ

24

28

30

90

83

78

4.9

0.6

30

7.0

−55 to 150

−40 to 125

V

V

A

A

°C/W

°C/W

°C/W

°C/W

°C/W

°C/W

°C

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

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