NIS3001 Ver la hoja de datos (PDF) - ON Semiconductor
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NIS3001 Datasheet PDF : 18 Pages
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NIS3001
ELECTRICAL CHARACTERISTICS
(Test conditions unless otherwise noted; VIN = 12 V, VS = VBST = VEN = 5 V, FSW = 500 kHz, VCO = 4 V)
Characteristic
Symbol
Min
DC OPERATING SPECIFICATIONS
Power Supply
Power Loss
VOUT = 1.5 V, IOUT = 4.5 A
VOUT = 1.5 V, IOUT = 15 A
VS Operating Current (switching)
VS Quiescent Current, Shutdown, VEN = 0 V
Bootstrap Operating Current (switching)
EN Input Characteristics
Enable Input Bias Current
EN High Threshold, (Operating), VIN = open
EN Low Threshold, (Shutdown), VIN = open
Undervoltage Lockout
Undervoltage Lockout, Turn on, (VCO = VEN = 4 V, VIN = open)
Undervoltage Lockout, Turn off, (VCO = VEN = 4 V, VIN = open)
Hysteresis for Undervoltage Lockout, (VCO = VEN = 4 V, VIN = open)
CO Input Characteristics
CO Input Bias Current, (VIN = open, VCO = 4 v)
CO High Threshold, VIN = open
CO Low Threshold, VIN = open
Thermal Shutdown
Overtemperature Trip Point
PLOSS
−
−
IVS
−
IVS
−
IBST
−
IEN
−
VEN
2.0
VEN
−
UVLO
4.0
UVLO
3.7
Vhyst
−
ICO
−
VCO
2.0
VCO
−
−
Hysteresis
−
AC OPERATING SPECIFICATIONS
High−Side Driver
Propagation Delay Time, TG Going High (Nonoverlap time); 50% between
tpdhTG
−
BG (going low) and TG (going high) VBST − VDRN = 5.0 V
Propagation Delay Time, TG Going Low; 50% between CO (going low) and
tpdlTG
−
TG (going low) VBST − VDRN = 5.0 V
Propagation Delay Time, BG Going High (Nonoverlap time); 50% between
tpdhBG
−
DRN (going low) and BG (going high)
Propagation Delay Time, BG Going Low; 50% between CO (going high) and tpdlBG
−
BG (going low)
POWER MOSFET ON CHARACTERISTICS
High−Side Driver
Static Drain−to−Source On−Resistance
(VGS = 5 V, ID = 20 A)
RDS(on)
−
Low−Side Driver
Static Drain−to−Source On−Resistance
(VGS = 5 V, ID = 20 A)
RDS(on)
−
Typ
0.85
2.67
19
10
7
1
−
−
4.25
4.0
275
3
−
−
170
30
45
60
43
8.0
10.5
3.19
Max
Unit
W
−
−
−
mA
−
mA
10
mA
−
mA
−
V
0.8
V
4.48
V
4.3
V
−
mV
−
nA
−
V
0.8
V
−
°C
−
°C
−
ns
−
ns
−
ns
−
ns
−
mW
−
mW
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