NGTB25N120LWG Ver la hoja de datos (PDF) - ON Semiconductor
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NGTB25N120LWG Datasheet PDF : 9 Pages
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NGTB25N120LWG
TYPICAL CHARACTERISTICS
10,000
1000
100
td(on)
td(off)
tf
tr
10 VCE = 600 V
VGE = 15 V
IC = 25 A
1 TJ = 150°C
5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 13. Switching Time vs. Rg
8
VGE = 15 V
7 IC = 25 A
Rg = 10 W
6 TJ = 150°C
Eon
5
4
3
2
Eoff
1
0
375 425 475 525 575 625 675 725 775
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Energy Loss vs. VCE
1000
100
tf
td(off)
td(on)
1000
100
10
1 ms
50 ms
dc operation
100 ms
tr
10 VGE = 15 V
IC = 25 A
Rg = 10 W
TJ = 150°C
1
375 425 475 525 575 625 675 725 775
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. VCE
1
Single Nonrepetitive
Pulse TC = 25°C
0.1 Curves must be derated
linearly with increase
in temperature
0.01
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Safe Operating Area
1000
100
10
VGE = 15 V, TC = 125°C
1
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Reverse Bias Safe Operating Area
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